Russian Germanium PNP Fuzz Face Transistors – MP16b

Description

NOS Russian Military Transistors – MP16b / 2n404 Equivalent

2 Transistors matched for our Fuzz layout
(approx. 60 – 70 hFE, low leakage, Russian PNP)
See the gallery for an example of the vero/stripboard layout we suggest.
–
Type Designator: MP16B

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: –